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Chinese Physics Letters

Volumn 19, Issue 1, 2002, Pages 114-116

Binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells

(4) Liu, Jian Jun a,b,c Zhang, Shu Fang a Yang, Guo Chen b Li, Shu Shen c

a HEBEI NORMAL UNIVERSITY (China)

b HEBEI UNIVERSITY OF TECHNOLOGY (China)

c INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DIELECTRIC MATERIALS; EXCITONS; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

EFFECTIVE MASS; NEGATIVELY-CHARGED EXCITON; POSITIVELY CHARGED EXCITONS; QUANTUM-WELLS; SIMPLE++; TWO PARAMETER; TWO-MATERIALS; WELL WIDTH;

GALLIUM ARSENIDE;

EID: 0036011496 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/19/1/335 Document Type: Article

Times cited : (8)

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