Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells

Chinese Physics Letters

Volumn 17, Issue 5, 2000, Pages 358-359

  Liu, Jian Jun ^a,b   Zhang, Shu Fang ^a   Kong, Xiao Jun ^a,b   Li, Shu Shen ^b  

^a HEBEI NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; EXCITONS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; IONIZATION; SEMICONDUCTING GALLIUM; WAVE FUNCTIONS;

DONOR IMPURITIES; DONOR-BOUND EXCITON; EXCITON BOUND; IONIZED DONORS; QUANTUM-WELLS; TWO PARAMETER; WELL WIDTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034382465     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/17/5/017     Document Type: Article

References (15)

1. P. J. Dean et al., in Topics in Current Physics, edited by K. Cho (Springer-Verlag, Berlin, 1979), Vol. 14, p. 55.
2. D. C. Reynolds and T. C. Collins, Excitons: Their Properties and Uses (Academic Press, New York, 1981) p. 110.
3. B. V. Shanabrook and J. Comas, Surf. Sci. 142 (1984) 504.
4. X. Liu et al., Phys. Rev. B 38 (1988) 8522.
5. D. C. Reynolds et al., Phys. Rev. B 40 (1989) 6210.
6. D. A. Kleinman, Phys. Rev. B 28 (1983) 871.
7. J. J. Liu and X. J. Kong, Phys. Rev. B 55 (1997) 1349.
8. J. J. Liu et al., J. Appl. Phys. 84 (1998) 2638.
9. C. Prister et al., Phys. Rev. B 30 (1984) 7302.
10. D. B . Tran Thoai et al., Phys. Rev. B 42 (1990) 5906.
11. Ronald L. Greene and Krishan K. Bajaj, Solid State Commun. 45 (1982) 825.
12. LIU Jian-jun et al., Chin. Phys. Lett. 15 (1998) 588.
13. LIU Jian-jun et al., Chin. Phys. Lett. 16 (1999) 526.
14. The Kohn-Luttinger parameters are obtained by linear interpolation between the values given in Ref. 10.
15. C. Mailhiot et al., Phys. Rev. B 26 (1982) 4449.