Effect of partial oxygen pressure during low-temperature annealing on the crystallization and the electrical properties of SrBi2Ta2O9

Journal of the Korean Physical Society

Volumn 40, Issue 4, 2002, Pages 733-736

  Lee, Kwan ^a   Choi, Hoon Sang ^a   Lee, Jong Han ^a   Jang, Yu Min ^a   Choi, In Hoon ^a  

^a Korea University   (South Korea)

Author keywords

MOD; NVFRAM; Oxygen partial pressure; RTA; SBT

Indexed keywords

EID: 0036011368     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.40.733     Document Type: Conference Paper

References (11)

1. Di Wu, Aidong Li, Huiqin Ling, Tao Yu, Zhiguo Liu and Naiben Ming, J. Appl. Phys. 87, 1795 (2000).
2. J.F. Scott and C.A. Araujo, Science 246, 1400 (1989).
3. C.A. Paz de Araujo, J.D. MCMillan, M.C. Scott and J.F. Scott, Nature 374, 627 (1995).
4. T.J. Boyle, C.D. Buchheit, M.A. Rodriguez, H.N. Al-Shareef, B.A. Hernandez, B. Scott and J.W. Ziller, J. Mater. Res. 11, 2274 (1996).
5. D.J. Taylor, R.E. Jones, P. Zurcher, P. Chu, Y.T. Lii, B. Jiang, and S.J. Gillespie, Appl. Phys. Lett. 68, 2300 (1996).
6. R.E. Jones, P.D. Maniar, R. Mozzami, P. Zucher, J.Z. Witowski, Y.T. Lii, P. Chu and S.J. Gillespie, Thin Solid Films 270, 584 (1995).
7. C.H. Yang, S.S. Park and S.G. Yoon, J. Mater. Sci. 33, 2851 (1998).
8. J.K. Lee, T.K. Song and H.J. Juong, Integr. Ferroelectric 15, 115 (1997).
9. T. Atuski, N. Soyama, T. Yonezawa and K. Ogi, Jpn. J. Appl. Phys. 34, 5096 (1995).
10. H.S. Choi, E.H. Kim, I.H. Choi, Y.T. Kim, J.H. Choi and J.Y. Lee, J. Korean Phys. Soc. 39, 179 (2001).
11. H.S. Choi, K.S. Park, J.S. Hur, I.H. Choi, Y.T. Kim and S.I. Kim, J. Korean Phys. Soc. 39, S228 (2001).