Time-dependent analysis of high-gain triggering in semi-insulating GaAs photoconductive switches

Chinese Physics Letters

Volumn 18, Issue 11, 2001, Pages 1479-1480

  Shi, We ^a   Zhao, Wei ^b   Liang, Zhen Xian ^c   Sun, Xiao Wei ^d  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b State Key Laboratory of Transient Optics Technology   (China)

^c XI'AN JIAOTONG UNIVERSITY   (China)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INSULATION; MONTE CARLO METHODS; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM;

BUILT-IN FIELDS; GAAS PHOTOCONDUCTIVE SWITCH; HIGH GAIN; MONTE CARLO PARTICLES; OPTICAL-; PHOTOGENERATED CARRIERS; SEMI-INSULATING GAAS; TEMPORAL VARIATION; TIME-DEPENDENT ANALYSIS; TRANSIENT TRANSPORT;

PHOTOCONDUCTIVE SWITCHES;

EID: 0035634977     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/11/317     Document Type: Article

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