Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1174-1177

  Sigmund, J ^a   Saglam, M ^a   Hartnagel, H L ^a   Zverev, V N ^b   Raichev, O E ^b   Debray, P ^b   Miehe, G ^a   Fuess, H ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; MORPHOLOGY; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH INTERRUPTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035998550     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1468658     Document Type: Conference Paper

References (12)