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Volumn 20, Issue 4, 2002, Pages 1591-1599
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Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4×4) surfaces
a b a c d b a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COBALT;
FILM GROWTH;
INTERFACES (MATERIALS);
LOW ENERGY ELECTRON DIFFRACTION;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
PHOTOEMISSION;
SCANNING TUNNELING MICROSCOPY;
STRUCTURE (COMPOSITION);
THERMAL EFFECTS;
ULTRAHIGH VACUUM;
X RAY SPECTROSCOPY;
INTERFACE COMPOSITION;
X RAY PHOTOEMISSION SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0035982799
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1491993 Document Type: Conference Paper |
Times cited : (24)
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References (24)
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