Dry gate recessed InGaAs/InAlAs/InP HEMTs using CH4/H2 inductively coupled plasma

Journal of the Korean Physical Society

Volumn 39, Issue SUPPL. Part 1, 2001, Pages

  Yoon, Hyung Sup ^a   Lee, Jin Hee ^a   Lee, Kyung Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035542156     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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