Electron and hole impact excitation of Er in MBE grown Si:O and Si1-yCy diodes

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 109-112

  Markmann, M ^a   Neumann, R ^a   Brunner, K ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Carbon; Electroluminescence; Erbium; Molecular beam epitaxy; Silicon

Indexed keywords

ACTIVATION ENERGY; CRYSTAL LATTICES; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ERBIUM; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

ELECTRON IMPACT EXCITATION; HOLE IMPACT EXCITATION;

SEMICONDUCTOR DIODES;

EID: 0035942425     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00674-7     Document Type: Article

References (6)