Excitation of Er3+ ions in mixed amorphous-nanocrystalline GaN:Er films

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 144-146

  Aldabergenova, S B ^a   Albrecht, M ^a   Strunk, H P ^a   Viner, J ^b   Taylor, P C ^b   Andreev, A A ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF UTAH   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Annealing; GaN; Transmission electron microscopy

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL MICROSTRUCTURE; ERBIUM; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDES; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; STARK SPLITTING;

SEMICONDUCTING FILMS;

EID: 0035942407     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00698-X     Document Type: Article

References (6)