Room-temperature photoluminescence from Tb3+ ions in SiO2 and a-SiC:H thin films deposited by magnetron co-sputtering

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 185-187

  Sendova Vassileva, M ^a   Nikolaeva, M ^a   Dimova Malinovska, D ^a   Tzolov, M ^a   Pivin, J C ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Photoluminescence; Rare earth ions; Terbium

Indexed keywords

AMORPHOUS SILICON; DOPING (ADDITIVES); IMPURITIES; MAGNETRON SPUTTERING; PHASE TRANSITIONS; PHOTOLUMINESCENCE; QUENCHING; THIN FILMS;

MAGNETRON CO-SPUTTERING;

AMORPHOUS FILMS;

EID: 0035942382     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00734-0     Document Type: Article

References (7)