Small polaron effect on carrier recombination in perovskite manganite thin films

Solid State Communications

Volumn 118, Issue 8, 2001, Pages 419-424

  Wu, G R ^a   Sasaki, M ^a   Isa, T ^a   Negishi, H ^a   Inoue, M ^a   Gao, W X ^b   Xiong, G C ^c  

^a HIROSHIMA UNIVERSITY   (Japan)

^b XIAMEN UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

A. Perovskite manganite; D. Small polaron; D. Transient thermoelectric effect

Indexed keywords

AMORPHOUS FILMS; ELECTRON TRANSITIONS; FERROMAGNETISM; HOLE TRAPS; LANTHANUM COMPOUNDS; MAGNETIC RELAXATION; MASS TRANSFER; PARAMAGNETISM; POLARONS; THERMOELECTRICITY; THIN FILMS;

TRANSIENT THERMOELECTRIC EFFECTS (TTE);

PEROVSKITE;

EID: 0035938758     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00117-X     Document Type: Article

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