SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 42, 2001, Pages 9515-9534

Coulomb charging effects in an open quantum dot device

(9) Tkachenko, O A a,b Tkachenko, V A a Baksheyev, D G a Liang, C T c Simmons, M Y d Smith, C G e Ritchie, D A e Kim, Gil Ho f Pepper, M e

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

d UNIVERSITY OF NEW SOUTH WALES (Australia)

e UNIVERSITY OF CAMBRIDGE (United Kingdom)

f Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; GATES (TRANSISTOR); MAGNETIC FIELD MEASUREMENT; NUMERICAL ANALYSIS; OSCILLATIONS; THERMAL EFFECTS;

BALLISTIC TRANSPORT; COULOMB CHARGING EFFECTS; ELECTRON GAS RESERVOIRS; LANDAUER FORMULA; PERIODIC OSCILLATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035934914 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/42/312 Document Type: Article

Times cited : (16)

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