Device performance of ultra-violet emitting diodes grown by MBE

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 782-785

  Mayer, Markus ^a   Pelzmann, Arthur ^a   Kirchner, Christoph ^a   Schauler, Markus ^a   Eberhard, Franz ^a   Kamp, Markus ^a   Unger, Peter ^a   Ebeling, Karl Joachim ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

GaN; LED; MBE; MCp2Mg; NH3; UVED

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; ULTRAVIOLET DEVICES;

ULTRAVIOLET EMITTING DIODES (UVED);

LIGHT EMITTING DIODES;

EID: 0032091603     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00293-0     Document Type: Article

References (7)

1. P. Schlotter, R. Schmidt, J. Schneider, Appl. Phys. A 64 (1997) 417.
2. S. Nakamura, G. Fasol, The Blue Laser Diode, GaN based Light Emitters and Lasers, Springer, Berlin, 1997.
3. H.H. Perkampus, UV-VIS Atlas of Organic Compounds, VCH Publishers, Weinheim, 1992.
4. M. Kamp, M. Mayer, A. Pelzmann, K.J. Ebeling, Mater. Res. Soc. Proc. 449 (1997) 161.
5. M. Mayer, A. Pelzmann, M. Schauler, F. Eberhard, C. Kirchner, M. Kamp, P. Unger, K.J. Ebeling, Electron. Lett., submitted.
6. S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 30 (1991) 1998.
7. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28 (1989) L2112.