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Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 173-177

Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

(9) Morel, Aurélien a Taliercio, Thierry a Lefebvre, Pierre a Gallart, Mathieu a Gil, Bernard a Grandjean, Nicolas b Massies, Jean b Grzegory, Izabella c Porowski, Sylvester c

a UNIVERSITÉ MONTPELLIER 2 (France)

b CNRS (France)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

Exciton polariton modes; GaN film; Molecular beam epitaxy

Indexed keywords

EXCITONS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTOR GROWTH;

CONFINED EXCITON-POLARITON MODES;

SEMICONDUCTING FILMS;

EID: 0035933169 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00778-9 Document Type: Article

Times cited : (2)

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