New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 157-161

  Mosser, Vincent ^a   Callen, Olivier ^b   Kobbi, Farah ^c   Adam, Didier ^d   Grattepain, Claude ^d   Draidia, Nasser ^e  

^a SCHLUMBERGER   (France)

^b UNIV MONTPELLIER   (France)

^c SCHLUMBERGER   (United States)

^d THALES   (France)

^e PICOGIGA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PLANAR CONDUCTION;

HETEROJUNCTIONS;

EID: 0033284681     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00100-2     Document Type: Article

References (9)

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6. S.T. Pantelides (ed.), Deep Centers in Semiconductors: A State-Of-The-Art Approach, 2nd edition, Gordon and Breach, New York, 1993.
7. Hasegawa H., Sawada T. On the electrical properties of compound semiconductor interfaces in metal/insulator/semiconductor structures and the possible origin of interface states. Thin Solid Films. 103:1983;119-140.
8. 2/GaAs interface properties by electron cyclotron resonance plasma-enhanced chemical vapor deposition and Ga outdiffusion control. Appl. Phys. Lett. 59:1991;84-86.
9. Present authors, unpublished.