Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump-terahertz-probe experiments

Applied Physics Letters

Volumn 78, Issue 22, 2001, Pages 3478-3480

  Lui, K P H ^a   Hegmann, F A ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035926856     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1375841     Document Type: Article

References (22)

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