Interpretation of photocurrent correlation measurements used for ultrafast photoconductive switch characterization

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2649-2657

  Jacobsen, R H ^a   Birkelund, K ^a,b   Holst, T ^a,c   Uhd Jepsen, P ^a   Keiding, S R ^a  

^a AARHUS UNIVERSITY   (Denmark)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c NKT Research & Innovation AS   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DETECTION; SILICON ON SAPPHIRE TECHNOLOGY; SPECTROSCOPIC ANALYSIS;

CARRIER DYNAMICS; CARRIER LIFETIMES; ELECTRICAL PULSES; PHOTOCURRENT CORRELATION MEASUREMENT; PULSE PROPAGATION; TETRAHERTZ SPECTROSCOPY; ULTRAFAST PHOTOCONDUCTIVE SWITCHES; ULTRAFAST SCREENING;

OPTICAL SWITCHES;

EID: 0030105673     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361135     Document Type: Article

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