SCOPUS 정보 검색 플랫폼

Volumn 482-485, Issue PART 1, 2001, Pages 39-43

First principles study of the adsorption of C60 on Si(1 1 1)

(6) Sánchez Portal, Daniel a Artacho, Emilio b Pascual, José I b,c Gómez Herrero, Julio b Martin, Richard M a Soler, José M b,d

a University of Illinois at Urbana Champaign (United States)

b UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

d HARVARD UNIVERSITY (United States)

Author keywords

Chemisorption; Density functional calculations; Fullerenes

Indexed keywords

ADSORPTION; BOND STRENGTH (CHEMICAL); CHARGE TRANSFER; FULLERENES; OPTIMIZATION; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SEMICONDUCTING SILICON;

FIRST PRINCIPLES STUDY;

SURFACE CHEMISTRY;

EID: 0035919101 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(00)01008-6 Document Type: Conference Paper

Times cited : (14)

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