SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 50, 2001, Pages 11633-11639

On the role of electron-phonon interaction in the resistance anisotropy of two-dimensional electrons in GaAs heterostructures

(1) Fil, D V a

a INSTITUTE FOR SINGLE CRYSTALS (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; DEFORMATION; ELECTRON ENERGY LEVELS; MODULATION; PIEZOELECTRIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON-DENSITY MODULATION;

HETEROJUNCTIONS;

EID: 0035905465 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/50/322 Document Type: Article

Times cited : (3)

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