SCOPUS 정보 검색 플랫폼

Solid State Communications

Volumn 119, Issue 2, 2001, Pages 89-94

An investigation of orientational symmetry-breaking mechanisms in high Landau levels

(6) Cooper, K B a Lilly, M P a Eisenstein, J P a Jungwirth, T b,c Pfeiffer, L N d West, K W d

a CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

b UNIVERSITY OF TEXAS AT AUSTIN (United States)

c INSTITUTE OF PHYSICS (Czech Republic)

d LUCENT TECHNOLOGIES (United States)

Author keywords

C. Crystal structure and symmetry; D. Electronic transport; D. Quantum Hall effect

Indexed keywords

ANISOTROPY; COMPUTATIONAL METHODS; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; INTERFACES (MATERIALS); QUANTUM THEORY; SURFACE ROUGHNESS;

HIGH LANDAU LEVELS; QUANTUM HALL EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035816418 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(01)00212-5 Document Type: Article

Times cited : (60)

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