Formation of horizontal and vertical insulation in semiconductors by ion implantation

Nukleonika

Volumn 44, Issue 2, 1999, Pages 201-206

  Komarov, F F ^a   Kamyshan, A S ^a   Mironov, A M ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004333176     PISSN: 00295922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Komarov F.F., Solov'yev V.S., Tishkov V.S., Shiryaev S.Yu.: Thermal recrystallization of silicon amorphous layers after argon, oxygen and nitrogen ion implantation. Radiation Effects 69. 179-189, 1983.
2. Li J.: Proton-implanted new type silicon material subjected to two-step furnace annealing. Nucl. Instr. Meth. B 59/60, 1053-1055, 1991.
3. +. Nucl. Instr. Meth. B106, 294-297, 1995.
4. Ridgway M.C., Ellingboe S.L., Elliman R.G., Williams J.S.: High-energy ion implantation for electrical isolation of microelectronic devices. Nucl. Instr. Meth. B89, 290-297, 1994.