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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 24, 2001, Pages 2453401-2453404

Rashba effect in inversion layers on p-type InAs MOSFET's

(1) Lamari, Saadi a

a FERHAT ABBAS UNIVERSITY (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC METHOD; ARTICLE; ELECTRIC FIELD; ELECTRON TRANSPORT; NONLINEAR SYSTEM; QUANTUM MECHANICS; SEMICONDUCTOR; STRUCTURE ANALYSIS;

EID: 0035894414 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.