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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 11 B, 2001, Pages

Low temperature growth of polycrystalline silicon films by hot-wire chemical vapor deposition using SiCl4/H2 gases

(2) Wong, Te Chi a Wu, Jih Jen a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

Hot wire chemical vapor deposition; Hydrogen; Low temperature growth; Polycrystalline silicon films; SiCl4

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GRAIN SIZE AND SHAPE; HYDROGEN; LOW TEMPERATURE PROPERTIES; SILICON; THICKNESS MEASUREMENT;

CRYSTALLINE FRACTION; HOT-WIRE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE GROWTH; POLYCRYSTALLINE SILICON FILMS; SUBSTRATE TEMPERATURE;

POLYCRYSTALLINE MATERIALS;

EID: 0035891953 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l1207 Document Type: Letter

Times cited : (9)

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