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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 15, 2001, Pages 1552011-1552017

Electronic structure of the paramagnetic boron oxygen hole center in B-doped SiO2

(2) Pacchioni, G a Vezzoli, M a

a UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; GLASS; OXYGEN; SILICON DIOXIDE;

ARTICLE; CALCULATION; CHEMICAL BINDING; DENSITY; MOLECULAR MODEL; NUCLEAR MAGNETIC RESONANCE; QUANTUM MECHANICS; STRUCTURE ANALYSIS;

EID: 0035887180 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (11)

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