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Volumn 105, Issue 26, 2001, Pages 6097-6102

Electronic structure of defect centers P1, P2, and P4 in P-doped SiO2

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON TRAPS; ELECTRONIC STRUCTURE; GROUND STATE; HOLE TRAPS; PHOSPHORUS; POINT DEFECTS; PROBABILITY DENSITY FUNCTION; QUARTZ; SEMICONDUCTOR DOPING;

EID: 84961971238     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0101965     Document Type: Article
Times cited : (28)

References (33)
  • 20
    • 84962431948 scopus 로고    scopus 로고
    • In ref 1, p 161
    • Pacchioni, G. In ref 1, p 161.
    • Pacchioni, G.1
  • 33
    • 84962356182 scopus 로고    scopus 로고
    • Personal communication
    • Karna, S. Personal communication.
    • Karna, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.