Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages

  Wright, O B ^a   Matsuda, O ^a   Perrin, B ^b   Gusev, V E ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b SORBONNE UNIVERSITÉ   (France)

^c UNIVERSITÉ DU MAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

ACOUSTICS; ARTICLE; DIFFUSION; ELECTRON TRANSPORT; LIGHT ABSORPTION; METAL BINDING; OPTICS; PHASE TRANSITION; PHONON; PULSATILE FLOW; PULSE GENERATOR; SEMICONDUCTOR; TRANSPORT KINETICS;

EID: 0035880820     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.081202     Document Type: Article

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19. The echo heights were proportional to the pump power, but varied slightly between measurements owing to changes in optical alignment.
20. These were calculated by converting the photoelastic constants P reported by P. Etchegoin, Phys. Rev. B46, 15 139 (1992) to those relevant here: (formula presented) where (formula presented) and (formula presented) are elastic constants taken from Ref. 17.
21. We assume anticorrelation between the spatial profile of the wavefront of the acoustic pulse and the profile of the surface roughness when the acoustic pulse returns to the surface, leading to (formula presented) where σ is the mean-square surface roughness. We calculate (formula presented) from (formula presented) where (formula presented) is the FWHM optical spot diameter of the pump and probe.
22. Values of (formula presented) up to ∼0.2 gave reasonable fits.