Atomic arrangement of dislocation defects in GaAs by HREM

Materials Science and Engineering: A

Volumn 309-310, Issue , 2001, Pages 125-128

  Yonenaga, I ^a   Lim, S H ^b   Lee, C W ^b   Shindo, D ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Atomic displacement; High resolution transmission electron microscopy; Perfect dislocation; Stacking fault; Z shape faulted dipole

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); DISSOCIATION; HIGH RESOLUTION ELECTRON MICROSCOPY; STACKING FAULTS; STRESS RELAXATION;

ATOMIC DISPLACEMENT; SCHOKLEY DISLOCATION;

SEMICONDUCTING GALLIUM ARSENIDE;

PLASTIC DEFORMATION;

EID: 0035879797     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(00)01737-8     Document Type: Article

References (11)