Characterization of process-induced lattice distortion in silicon by double-crystal x-ray topography using a curved collimator

Journal of Applied Physics

Volumn 90, Issue 2, 2001, Pages 670-674

  Kudo, Y ^a   Liu, K Y ^a   Kawado, S ^a,c   Xiaowei, Z ^b   Hirano, K ^b  

^a SONY CORPORATION   (Japan)

^b INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

^c RIGAKU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035878716     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380406     Document Type: Article

References (7)

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