Elimination of extrinsic components overlapping lattice distortion variations of a silicon single crystal obtained by double-crystal X-ray topography

Journal of Applied Crystallography

Volumn 33, Issue 2, 2000, Pages 226-233

  Kudo, Y ^a   Liu, K Y ^a   Kawado, S ^a   Hirano, K ^b  

^a SONY CORPORATION   (Japan)

^b INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; COLLIMATOR; CRYSTAL STRUCTURE; DEVICE; MATHEMATICAL COMPUTING; OPTICS; QUANTITATIVE DIAGNOSIS; STRUCTURE ANALYSIS; SYNCHROTRON; X RAY ANALYSIS;

EID: 0034480424     PISSN: 00218898     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0021889899015484     Document Type: Article

References (9)

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7. Kudo, Y., Liu, K.-Y., Kojima, S., Kawado, S. & Ishikawa, T. (1994). Semiconductor Silicon/1994, edited by H. R. Huff, W. Bergholz & K. Sumino, p. 1135. Pennington, New Jersey: The Electrochemical Society.
8. Kudo, Y., Liu, K.-Y., Kojima, S., Kawado, S. & Ishikawa, T. (1997). J. Electrochem. Soc. 144, 4035-4041.
9. Maekawa, I., Kudo, Y., Kojima, S., Kawado, S. & Ishikawa, T. (1993). Appl. Phys. Lett. 62, 2980-2982.