In situ surface analysis by infrared reflection absorption spectroscopy in PECVD of silicon-oxide films

Thin Solid Films

Volumn 386, Issue 2, 2001, Pages 252-255

  Inoue, Yasushi ^a   Sugimura, Hiroyuki ^a   Takai, Osamu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Infrared reflection absorption spectroscopy; Organosilicon compound; Plasma enhanced chemical vapor deposition; Surface reaction

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; CARBON; IMPURITIES; INFRARED SPECTROSCOPY; LIGHT POLARIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SENSITIVITY ANALYSIS; SILICA;

INFRARED REFLECTION ABSORPTION SPECTROSCOPY; SILICON DIOXIDE FILMS;

PROTECTIVE COATINGS;

EID: 0035874113     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01676-X     Document Type: Article

References (7)