Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 381-385

  Yasui, K ^a   Kimura, M ^a   Sanada, K ^a   Akahane, T ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILICON CARBIDE; SURFACES; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXY; HYDROGEN TERMINATED SILICON;

EPITAXIAL GROWTH;

EID: 0032635502     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00718-1     Document Type: Article

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