SCOPUS 정보 검색 플랫폼

Synthetic Metals

Volumn 119, Issue 1-3, 2001, Pages 469-470

Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

(8) Park, J G a Kim, G T a,b Krstic, V b Lee, S H a Kim, B a Roth, S b Burghard, M b Park, Y W a,c

a Seoul National University (South Korea)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

c FLORIDA STATE UNIVERSITY (United States)

Author keywords

Electrical transport; FET; Nanofiber; Polyacetylene

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRODES; GATES (TRANSISTOR); IODINE; NANOSTRUCTURED MATERIALS; SUBSTRATES; THERMAL EFFECTS; TRANSPORT PROPERTIES;

POLYACETYLENE NANOFIBERS;

POLYACETYLENES;

EID: 0035867463 PISSN: 03796779 EISSN: None Source Type: Journal
DOI: 10.1016/S0379-6779(00)00744-X Document Type: Article

Times cited : (25)

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