Grain boundary defects in RTCVD polycrystalline silicon for solar cells

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 257-262

  Grozdanic D ^a   Milat, O ^b   Rakvin, B ^c   Pivac, B ^b   Slaoui, A ^d   Monna, R ^d  

^a UNIVERSITY OF ZAGREB   (Croatia)

^b INSTITUTE OF PHYSICS   (Croatia)

^c RUDER BO KOVI INSTITUTE   (Croatia)

^d Faculté de Médecine   (France)

Author keywords

Dangling bonds; Grain boundaries; Polycrystalline silicon; Solar cells

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN GROWTH; OPTICAL PROPERTIES; POLYSILICON; SOLAR CELLS; TEXTURES; VOLUME FRACTION;

DANGLING BONDS;

SILICON;

EID: 0035858501     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00126-9     Document Type: Conference Paper

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