Optical and electrical properties of LPCVD silicon oxynitride films on silicon

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 205-209

  Szekeres, A ^a   Alexandrova, S ^a   Modreanu, M ^b   Cosmin, P ^c   Gartner, M ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^c Catalyst Semiconductor   (United States)

^d INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FILM PREPARATION; INTERFACES (MATERIALS); NITRIDING; REFRACTIVE INDEX; SILICON COMPOUNDS; VOLTAGE MEASUREMENT;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

OPTICAL FILMS;

EID: 0035858492     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00479-6     Document Type: Conference Paper

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