SiC(1 0 0) ordered film growth by C 60 decomposition on Si(1 0 0) surfaces

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 50-54

  Moras, P ^a,d   Mahne, N ^a,d   Ferrari, L ^a   Pesci, A ^a   Capozi, M ^a   Aversa, L ^b   Jha, S N ^c   Verucchi, R ^b   Iannotta, S ^b   Pedio, M ^a  

^a CNR   (Italy)

^b CNR   (Italy)

^c BHABHA ATOMIC RESEARCH CENTRE   (India)

^d UNIVERSITY OF TRIESTE   (Italy)

Author keywords

Film growth; Fullerene; Silicon carbide; Surface spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; ELECTRONIC PROPERTIES; FILM GROWTH; FULLERENES; LOW ENERGY ELECTRON DIFFRACTION; RAPID THERMAL ANNEALING; SYNCHROTRON RADIATION;

SURFACE SPECTROSCOPY;

SILICON CARBIDE;

EID: 0035852162     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00476-7     Document Type: Article

References (11)