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Applied Physics Letters

Volumn 79, Issue 11, 2001, Pages 1611-1613

Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy

(11) Zeimer, U a Bugge, F a Gramlich, S a Smirnitski, V a Weyers, M a Trankle G a Grenzer, J b Pietsch, U b Cassabois, G c Emiliani, V c Lienau, Ch c

a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

b UNIVERSITY OF POTSDAM (Germany)

c MAX BORN INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035839826 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1402638 Document Type: Article

Times cited : (10)

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