Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Zeimer, U ^a   Grenzer, J ^b   Pietsch, U ^b   Gramlich, S ^a   Bugge, F ^a   Smirnitzki, V ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b UNIVERSITY OF POTSDAM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

SINGLE QUANTUM WELL (SQW);

NANOSTRUCTURED MATERIALS;

EID: 0035926598     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/338     Document Type: Article

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