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Volumn 488, Issue 3, 2001, Pages 346-366

Adatom formation and atomic layer growth on Al(1 1 1) by ion bombardment: Experiments and molecular dynamics simulations

(6) Busse, Carsten a Engin, Cemal b Hansen, Henri a Linke, Udo c Michely, Thomas a Urbassek, Herbert M b

a RWTH AACHEN UNIVERSITY (Germany)

b Rheinland Pfälzische Technische Universität Kaiserslautern Landau (Germany)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Adatoms; Aluminum; Growth; Ion bombardment; Molecular dynamics; Scanning tunneling microscopy; Single crystal surfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

ARGON; COMPUTER SIMULATION; COOLING; CRYSTALLIZATION; ENERGY TRANSFER; ION BOMBARDMENT; MOLECULAR DYNAMICS; MORPHOLOGY; NEON; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE ROUGHNESS; SWELLING; XENON;

ADATOMS; UNDERCOOLING; VACANCIES;

ALUMINUM;

EID: 0035839151 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01110-4 Document Type: Article

Times cited : (27)

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