Phototransistor measurements in AlGaN/GaN HBTs

Electronics Letters

Volumn 37, Issue 23, 2001, Pages 1411-1412

  Chernyak, L ^a   Osinsky, A ^b   Pearton, S J ^c   Ren, F ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Corning Applied Technologies ^*  (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY;

CURRENT GAIN;

PHOTOTRANSISTORS;

EID: 0035829491     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010948     Document Type: Article

References (5)

1. Fabrication and performance of GaN electronic devices
2. 2 crystals
3. Electronic effects of ion mobility in semiconductors: Mixed electronic-ionic behavior and device creation in Si:Li
4. Low temperature device creation in Si via fast Li electromigration
5. Charge collection scanning electron microscopy