A traveling-wave model for optimizing the bandwidth of p-i-n photodetectors in silicon-on-insulator technology

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 6, 1998, Pages 953-963

  Huynen, Isabelle ^a,b   Salamone, Alberto ^b,c   Serres, Marc ^b  

^a IEEE   (Belgium)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c POLITECNICO DI TORINO   (Italy)

Author keywords

Photodefector; Silicon on insulator technology; Traveling wave devices

Indexed keywords

BANDWIDTH; CARRIER CONCENTRATION; LIGHT PROPAGATION; LIGHT REFLECTION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

TRAVELING-WAVE PHOTODETECTORS (TWPD);

PHOTODETECTORS;

EID: 0032208024     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.736084     Document Type: Article

References (11)

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