Characterization of p-AgGa0.25In0.75Se2/n-Zn0.35 Cd0.65S polycrystalline thin film heterojunctions

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 86, Issue 1, 2001, Pages 60-63

  Hema Chandra, G ^a   Hussain, O M ^a   Uthanna, S ^a   Srinivasulu Naidu, B ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Electrical properties and measurements; I III VI2 compounds; Optical properties; Semiconductors; Solar cells

Indexed keywords

CADMIUM SULFIDE; CAPACITANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILVER COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SHORT CIRCUIT CURRENTS; THIN FILMS; ZINC SULFIDE;

ELECTRICAL CONVERSION EFFICIENCY; OPEN CIRCUIT VOLTAGE; SILVER GALLIUM INDIUM SELENIDE; ZINC CADMIUM SULFIDE;

HETEROJUNCTIONS;

EID: 0035807095     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00663-8     Document Type: Article

References (19)