Characterization of p-AglnSe2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions

Materials Science and Engineering B

Volumn 49, Issue 1, 1997, Pages 27-30

  Ramesh, P P ^a   Hussain, O Md ^a   Uthanna, S ^a   Naidu, B S ^a   Reddy, P J ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Electrical properties and measurements; Optical properties; Semiconductor; Solar cells

Indexed keywords

CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILVER COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SHORT CIRCUIT CURRENTS; SOLAR CELLS; SPECTRUM ANALYSIS; THIN FILM DEVICES;

ELECTRICAL CONVERSION EFFICIENCY;

HETEROJUNCTIONS;

EID: 0002478310     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00062-7     Document Type: Article

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