Photo-thermal excitation gas-source MBE growth of super-doped Si:Mn for spin-photonics applications

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 230-234

  Nakayama, H ^a   Ohta, H ^b   Kulatov, E ^c  

^a Osaka Prefecture University   (Japan)

^b KOBE UNIVERSITY   (Japan)

^c PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

Auger electron spectroscopy; Manganese; MBE; Silicon

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTALLINE MATERIALS; ELECTRONIC STRUCTURE; MANGANESE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SILICON; THERMAL EFFECTS; THIN FILMS;

PHOTOTHERMAL EXCITATION;

FILM GROWTH;

EID: 0035801089     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01276-7     Document Type: Conference Paper

References (14)

1. The results of first-principles LMTO band structure calculations for both substitutional Si:Mn and interstitial Si:Mn