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Volumn 34, Issue 9, 2000, Pages 1090-1093

On the mechanism of porous silicon formation

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EID: 0034258503     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1309429     Document Type: Article
Times cited : (23)

References (28)
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    • J. E. Peou, C. H. de Villeneuve, F. Boutry-Forveille, et al., in Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, Ed. by P. Schmuki et al. (Pennington, 1997), Proc.-Electrochem. Soc. 97-7, 83 (1997).
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    • Peou, J.E.1    De Villeneuve, C.H.2    Boutry-Forveille, F.3
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    • Pits and pores: Formation, properties, and significance for advanced luminescent materials
    • Ed. by P. Schmuki et al. (Pennington, 1997)
    • E. S. Kooij, D. Vanmaekelbergh, and J. J. Kelly, in Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, Ed. by P. Schmuki et al. (Pennington, 1997), Proc.-Electrochem. Soc. 97-7, 70 (1997).
    • (1997) Proc.-Electrochem. Soc. , vol.97 , Issue.7 , pp. 70
    • Kooij, E.S.1    Vanmaekelbergh, D.2    Kelly, J.J.3
  • 15
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    • Pits and pores: Formation, properties, and significance for advanced luminescent materials
    • Ed. by P. Schmuki et al. (Pennington, 1997)
    • P. M. Faushet, in Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, Ed. by P. Schmuki et al. (Pennington, 1997), Proc.-Electrochem. Soc. 97-7, 27 (1997).
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    • Faushet, P.M.1
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    • D. N. Goryachev and O. M. Sreseli, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1383 (1997) [Semiconductors 31, 1192 (1997)].
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    • L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, and I. D. Yaroshetskiǐ, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 1961 (1993) [Semiconductors 27, 1078 (1993)].
    • (1993) Semiconductors , vol.27 , pp. 1078


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.