Diffusion of implanted 195Au radiotracer atoms in amorphous silicon under irradiation with 1 Mev-N+ ions

Defect and Diffusion Forum

Volumn , Issue 194-199 PART 1, 2001, Pages 659-666

  Voss, T ^a   Scharwaechter, P ^a   Frank, W ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Diffusion of Implanted 195Au; Diffusion Retardation and Enhancement by Intrinsic Defects; Diffusion under N+ Irradiation; Gold Doped Amorphous Silicon; Interstitial like 195Au Diffusion; Radiotracer Technique

Indexed keywords

GOLD; ION IMPLANTATION; IRRADIATION; POSITIVE IONS; RADIOACTIVE TRACERS; SPUTTERING;

RADIOTRACER ATOMS;

AMORPHOUS SILICON;

EID: 0035780915     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.194-199.659     Document Type: Article

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