Spectral response and surface layer thickness of GaAs:Cs-O negative electron affinity photo-cathode

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4580, Issue , 2001, Pages 632-641

  Chang, Benkang ^a   Liu, Wenli ^a   Fu, Rongguo ^a   Qian, Yunsheng ^a   Zong, Zhiyuan ^a   Wang, Guihua ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Activation; GaAs; Negative electron affinity; Photo cathode; Spectral response; Surface; Thickness; XPS

Indexed keywords

ACTIVATION ENERGY; CESIUM; CLEANING; ELECTRON ENERGY LEVELS; ONLINE SYSTEMS; OXYGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SPECTRUM ANALYSIS; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW LIGHT LEVEL IMAGING DETECTORS; NEGATIVE ELECTRON AFFINITY PHOTOCATHODE; SPECTRAL RESPONSE; SURFACE LAYER THICKNESS;

PHOTOCATHODES;

EID: 0035774825     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.444934     Document Type: Article

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