Use of a high-dispersion spectrograph for optimized visible and UV Raman measurements on semiconductor materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4469, Issue , 2001, Pages 47-56

  Whitley, Andrew ^a   Adar, Fran ^a   Morel, Sophie ^b   Moreau, Myriam ^b   Klymko, Nancy R ^c  

^a Horiba Jobin Yvon   (United States)

^b HORIBA LTD   (Japan)

^c IBM   (United States)

Author keywords

C nanotubes; Defect analysis; NIR laser excitation; PL (photoluminescence); Raman microscope; Semiconductors; UV laser excitation

Indexed keywords

CARBON NANOTUBES; LASER BEAM EFFECTS; OPTIMIZATION; PHOTODIODES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTRUM ANALYSIS; THIN FILMS; ULTRAVIOLET RADIATION; ULTRAVIOLET SPECTROGRAPHS;

SPECTRAL RESOLUTION;

SEMICONDUCTING FILMS;

EID: 0035767531     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.447382     Document Type: Article

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