An investigation of the electronic properties of cadmium zinc telluride surfaces using pulsed laser microwave cavity perturbation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4507, Issue , 2001, Pages 79-89

  Tepper, Gary ^a   Kessick, Royal ^a   Szeles, Csaba ^b  

^a Virginia Commonwealth University   (United States)

^b eV Products   (United States)

Author keywords

Carrier Decay Time; Microwave Cavity Perturbation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; ELECTRODES; HOLE TRAPS; IMPURITIES; LASER PULSES; LEAKAGE CURRENTS; MICROWAVES; PERTURBATION TECHNIQUES; PHOTOCONDUCTIVITY; SURFACE PHENOMENA; SURFACE ROUGHNESS;

ELECTRONIC DECAY; PULSED LASER MICROWAVE CAVITY PERTURBATION;

RADIATION DETECTORS;

EID: 0035767064     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.450744     Document Type: Article

References (7)

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3. T. Thio and J.W. Bennett, "Deep Donors in CdZnTe:Cl", Physical Review B, Vol. 54, No. 3, 1754 (1996).
4. Royal Kessick, Gary Tepper, Ed Lee and Ralph James, "Thermally Stimulated Cartier Lifetime Measurements in Detector Grade Cadmium Zinc Telluride", Journal of Applied Physics, 87, 2408 (2000).
5. Cs. Szeles and E.E. Eissler, "Current Issues of High-pressure Bridgman Growth of semi-insulating CdZnTe", MRS Symposium Proceedings, Vol. 487, (MRS, Warrendale, 1998), p. 3.
6. Cs. Szeles and M.C. Driver, "Growth and properties of semi-insulating CdZnTe for radiation detector applications", SPIE Proceedings Series, Vol. 3446, 2 (1998).
7. K.G. Lynn and Cs. Szeles, Private communication.