Application of attenuated phase-shifting masks to sub-130 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 787-797

  Koo, Chee Kiong ^a   Choo, Lay Cheng ^b   Lin, Qunying ^b   Tan, Shyue Seng ^a   Lee, Hui Jun ^a   Tam, Siu Chung ^a   See, Alex ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

248 nm lithography; Attenuated phase shifting mask; Off axis illumination; Opc; Polysilicon gate patterning; Simulation

Indexed keywords

ATTENUATION; LIGHTING; LITHOGRAPHY; PHASE SHIFT; POLYSILICON; PRINTING; PROXIMITY INDICATORS;

GATE PATTERNINGS;

MASKS;

LITHOGRAPHY;

EID: 0035758411     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.435778     Document Type: Article

References (3)

1. M.E. Kling et al., "Practicing Extension of 248 DUV Optical Lithography Using Trim-Mask PSM", SPIE Vol. 3679, pp. 10-17, 1999.
2. Jo Finders et al., "DUV Lithography (KrF) for 130nm Using Off-Axis Illumination and Assisting Features, " Semicon/Japan 99, SEMI Technology Symposium, Dec. 1999, Chiba, Japan.
3. C.A. Mack, "Analytic Approach to Understanding the Impact of Mask Errors on Optical Lithography, " SPIE Vol. 4000, pp. 215-227, 2000.