Doubly exposed patterning using mutually one-pitch step shifted alternating phase shift masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 762-769

  Lee, Sung Woo ^a   Chung, Dong Hoon ^a   Shin, In Gyun ^a   Kim, Yong Hoon ^a   Choi, Sung Woon ^a   Han, Woo Sung ^a   Sohn, Jung Min ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGREES OF FREEDOM (MECHANICS); EXPOSURE CONTROLS; IMAGE ANALYSIS; LITHOGRAPHY; PHASE SHIFT;

DOUBLY EXPOSED PATTERNING;

MASKS;

EID: 0035758383     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435775     Document Type: Conference Paper

References (5)

1. T. Terasawa, et al., Japanese Journal of Applied Physics, Vol 30, NO 11B, 1991, pp. 2991-2997.
2. J. Thiele, et al., SPIE Vol. 3679, 1999, pp. 548-555.
3. K. Kamon, et al., Japanese Journal of Applied Physics, Vol 30, NO 11B, 1991, pp. 3021-3029.
4. M. D. Levenson, et al., IEEE Trasactions on Electric Devices. ED-29, No12, 1982, pp. 1828-1836.
5. I.K. Shin, et al., "A study on the effect of mask reduction ration in alternating phas shift masks", 20th Annual BACUS Syposium on Photomask Technology.